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march 2009 rev 2 1/15 15 stf13nk50z stP13NK50Z, stw13nk50z n-channel 500 v, 0.40 ? , 11 a to-220, to-220fp, to-247 zener-protected supermesh tm power mosfet features extremely high dv/dt capability 100% avalanche tested gate charge minimized very low intrinsic capacitances very good manufact uring repeatability applications switching application description the supermesh? series is obtained through an extreme optimization of st?s well established strip-based powermesh? layout. in addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. such series complements st full range of high voltage mosfets. figure 1. internal schematic diagram type v dss r ds(on) max i d pw stf13nk50z 500 v <0.48 ? 11 a 30 w stP13NK50Z 500 v <0.48 ? 11 a 140 w stw13nk50z 500 v <0.48 ? 11 a 140 w to-220 to-220fp 1 2 3 1 2 3 to-247 1 2 3 table 1. device summary order code marking package packaging stf13nk50z f13nk50z to-220fp tube stP13NK50Z P13NK50Z to-220 tube stw13nk50z w13nk50z to-247 tube www.st.com www.datasheet.co.kr datasheet pdf - http://www..net/
contents stx13nk50z 2/15 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 www.datasheet.co.kr datasheet pdf - http://www..net/
stx13nk50z electrical ratings 3/15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220, to-247 to-220fp v ds drain-source voltage (v gs = 0) 500 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 c 11 11 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c =100 c 6.93 6.93 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 44 44 (1) a p tot total dissipation at t c = 25 c 140 30 w derating factor 1.12 0.24 w/c dv/dt (3) 3. i sd 11 a, di/dt 200 a/s, v dd 80% v (br)dss peak diode recovery voltage slope 4.5 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sin (t=1 s;t c = 25 c) 2500 v t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit to-220 to-247 to-220fp r thj-case thermal resistance junction-case max 0.89 4.17 c/w r thj-a thermal resistance junction-ambient max 62.5 50 62.5 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 11 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 240 mj www.datasheet.co.kr datasheet pdf - http://www..net/
electrical characteristics stx13nk50z 4/15 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating, t c =125 c 1 50 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 6.5 a 0.4 0.48 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds =15 v, i d = 6.5 a 8.5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25 v, f=1 mhz, v gs =0 1600 200 45 pf pf pf c oss eq (2) . 2. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs =0, v ds =0 v to 400 v 50 pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =400 v, i d = 13 a v gs =10 v figure 20 47 9 28 nc nc nc r g intrinsic gate resistan ce f= 1 mhz open drain 2.3 ? table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =400 v, i d =6.5 a, r g =4.7 ?, v gs =10 v figure 19 18 23 ns ns t d(off) t f turn-off delay time fall time 61 24 ns ns www.datasheet.co.kr datasheet pdf - http://www..net/
stx13nk50z electrical characteristics 5/15 table 8. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current 11 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) 44 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd =11 a, v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =6.5 a, di/dt = 100 a/s, v dd =40 v, tj=25 c figure 21 380 3.4 18 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =6.5 a, di/dt = 100 a/s, v dd =40 v, tj=150 c figure 21 425 3.9 18.5 ns c a table 9. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso (1) 1. the built-in back-to-back zener diodes have specif ically been designed to enhanc e not only the device?s esd capability, but also to make th em safely absorb possible voltage tr ansients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protec t the device?s integrity. these int egrated zener diodes thus avoid the usage of external components. gate-source breakdown voltage igs=1 ma (open drain) 30 v www.datasheet.co.kr datasheet pdf - http://www..net/
electrical characteristics stx13nk50z 6/15 2.1 electrical characteristi cs (curves) figure 2. safe operating area for to-220 figure 3. thermal impedance for to-220 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 www.datasheet.co.kr datasheet pdf - http://www..net/
stx13nk50z electrical characteristics 7/15 figure 8. output characteristics figure 9. transfer characteristics figure 10. transconductance figure 11. static drain-source on resistance figure 12. gate charge vs gate-source voltage figure 13. capacitance variations www.datasheet.co.kr datasheet pdf - http://www..net/
electrical characteristics stx13nk50z 8/15 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized b vdss vs temperature figure 18. maximum avalanche energy vs temperature www.datasheet.co.kr datasheet pdf - http://www..net/
stx13nk50z test circuit 9/15 3 test circuit figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive waveform figure 24. switching time waveform www.datasheet.co.kr datasheet pdf - http://www..net/
package mechanical data stx13nk50z 10/15 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. www.datasheet.co.kr datasheet pdf - http://www..net/
stx13nk50z package mechanical data 11/15 to-220 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 8 0.70 0.01 9 0.027 d 15.25 15.75 0.6 0.62 d1 1.27 0.050 e 10 10.40 0. 393 0.40 9 e 2.40 2.70 0.0 9 4 0.106 e1 4. 9 5 5.15 0.1 9 4 0.202 f1.2 3 1. 3 2 0.04 8 0.051 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.0 9 4 0.107 l1 3 14 0.511 0.551 l1 3 .50 3 . 93 0.1 3 7 0.154 l20 16.40 0.645 l 3 02 8 . 9 0 1.1 3 7 ? p 3 .75 3 . 8 5 0.147 0.151 q2.65 2. 9 5 0.104 0.116 www.datasheet.co.kr datasheet pdf - http://www..net/
package mechanical data stx13nk50z 12/15 dim. mm . x a m . p y t . n i m 6 . 4 4 . 4 a 7 . 2 5 . 2 b 5 7 . 2 5 . 2 d 7 . 0 5 4 . 0 e 1 5 7 . 0 f 0 7 . 1 5 1 . 1 1 f 5 . 1 5 1 . 1 2 f 2 . 5 5 9 . 4 g 7 . 2 4 . 2 1 g 4 . 0 1 0 1 h 6 1 2 l 6 . 0 3 6 . 8 2 3 l 6 . 0 1 8 . 9 4 l 6 . 3 9 . 2 5 l 4 . 6 1 9 . 5 1 6 l 3 . 9 9 7 l 2 . 3 3 a i d 7012510_rev_j a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1 to-220fp mechanical data www.datasheet.co.kr datasheet pdf - http://www..net/
stx13nk50z package mechanical data 13/15 dim. mm. min. typ max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data www.datasheet.co.kr datasheet pdf - http://www..net/
revision history stx13nk50z 14/15 5 revision history table 10. revision history date revision changes 07-aug-2007 1 first version 19-mar-2009 2 update i d value test condition in table 6 . www.datasheet.co.kr datasheet pdf - http://www..net/
stx13nk50z 15/15 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military , air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2009 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com www.datasheet.co.kr datasheet pdf - http://www..net/

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